Gallium Arsenide Substrate

Gallium Arsenide Substrate

Ib qho ntawm cov txiaj ntsig tseem ceeb ntawm gallium arsenide substrate yog nws lub zog hluav taws xob siab. Nws muaj cov khoom siv hluav taws xob loj dua piv rau lwm cov khoom siv semiconductor zoo li silicon, uas ua rau nws zoo tagnrho rau cov khoom siv hluav taws xob siab, qis suab nrov.
Xa kev nug
Tsham tam sim no
Hauj lwm lawm
Kev tsis
Product Description

 

Ib qho ntawm cov txiaj ntsig tseem ceeb ntawm gallium arsenide substrate yog nws lub zog hluav taws xob siab. Nws muaj cov khoom siv hluav taws xob loj dua piv rau lwm cov khoom siv semiconductor zoo li silicon, uas ua rau nws zoo tagnrho rau cov khoom siv hluav taws xob siab, qis suab nrov. Tsis tas li ntawd, nws muaj qhov ncaj qha bandgap uas ua rau nws tsim tau cov teeb pom kev zoo-emitting diodes uas tawm hauv cheeb tsam pom thiab infrared.

 

Lwm qhov kom zoo dua ntawm no substrate yog nws cov thermal conductivity, uas pab kom dissipating tshav kub sai. Cov yam ntxwv no tshwj xeeb tshaj yog muaj txiaj ntsig zoo hauv kev siv hluav taws xob hluav taws xob uas muaj cua sov dissipation yog qhov tseem ceeb. Gallium arsenide substrate kuj muaj qhov sib zog tawg siab, uas ua kom nws muaj kev ntseeg tau txawm tias nyob rau hauv cov xwm txheej siab.

 

Standard Dimensions thiab Tolerances rau 150mm Diameter GaAs Wafer

Khoom

Dimension

Ua siab ntev

Chav tsev

Txoj kab uas hla

150

+/-0.5

mm

Thickness, Center Point

     

Option A

675

+/-25

μm

Kev xaiv B

550

+/-25

μm

Notch Orientation

[010]

+/-2

qib

Notch Qhov tob

1

+0.25/-0.0

mm

       

Standard Dimensions thiab Tolerances rau 100mm Diameter GaAs Wafer

Khoom

Dimension

Ua siab ntev

Chav tsev

Txoj kab uas hla

100

+/-0.5

mm

Thickness, Center Point

675

+/-25

μm

Primary Flat Lenght

18

+/-2

mm

Secondary Flat Lenght

18

+/-2

mm

US/SEMI thiab E/J-Flat-Option muaj

     
       

Standard Dimensions thiab Tolerances rau 200mm Diameter GaAs Wafer

Khoom

Dimension

Ua siab ntev

Chav tsev

Txoj kab uas hla

200

+/-0.5

mm

Thickness, Center Point

625

+/-25

μm

Notch Orientation

[010]

+/-2

qib

Notch Qhov tob

1

+0.25/-0.0

mm

       

Standard Dimensions thiab Tolerances rau 3 nti Diameter GaAs Wafer

Khoom

Dimension

Ua siab ntev

Chav tsev

Txoj kab uas hla

76.2

+/-0.5

mm

Thickness, Center Point

625

+/-25

μm

Primary Flat Lenght

22

+/-2

mm

Secondary Flat Lenght

11

+/-2

mm

US/SEMI thiab E/J-Flat-Option muaj

     

 

Khoom duab

4 11

4

Vim Li Cas Xaiv Peb

 

Peb cov khoom yog sourced tshwj xeeb los ntawm lub ntiaj teb no sab saum toj tsib manufacturers thiab ua domestic factories. Kev txhawb nqa los ntawm cov kws tshaj lij hauv tsev thiab thoob ntiaj teb cov kws tshaj lij pab pawg thiab kev tswj xyuas nruj.

Peb lub hom phiaj yog los muab cov neeg siv khoom nrog kev txhawb nqa ib leeg rau ib leeg, ua kom cov kev sib txuas lus zoo uas muaj kev tshaj lij, raws sijhawm, thiab ua haujlwm tau zoo. Peb muab qhov tsawg kawg nkaus txiav txim kom muaj nuj nqis thiab lav kev xa khoom sai hauv 24 teev.

 

Factory Show

 

Peb cov khoom lag luam loj muaj 1000+ cov khoom, kom ntseeg tau tias cov neeg siv khoom tuaj yeem xaj kom tsawg li ib thooj. Peb tus kheej cov khoom siv rau dicing & backgrinding, thiab tag nrho kev koom tes nyob rau hauv lub ntiaj teb no kev lag luam saw pab kom peb sai li sai tau cov zaub mov xa tuaj kom ntseeg tau tias cov neeg siv khoom txaus siab thiab yooj yim.

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Peb Daim Ntawv Pov Thawj

 

Peb lub tuam txhab txaus siab rau ntau daim ntawv pov thawj peb tau txais, suav nrog peb daim ntawv pov thawj patent, ISO9001 daim ntawv pov thawj, thiab daim ntawv pov thawj National High-Tech Enterprise. Cov ntawv pov thawj no sawv cev rau peb txoj kev mob siab rau kev tsim kho tshiab, kev tswj xyuas zoo, thiab kev cog lus rau kev ua tau zoo.

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Cim npe nrov: Tuam Tshoj gallium arsenide substrate manufacturers, lwm tus neeg, Hoobkas