1. Dab tsi yog Ntuj Oxide Txheej ntawm Silicon Wafer
Ntuj oxide zaj duab xis (tseem hu ua ntuj oxide txheej) ntawm silicon wafer hais txog ib txheej nyias nyias ntawm silicon dioxide (SiO₂) tsim los ntawm cov tshuaj tiv thaiv ntawm silicon wafer thiab oxygen hauv huab cua ntawm chav tsev kub. Qhov no oxide zaj duab xisloj hlob tuajtom qab lub silicon wafer raug rau huab cua, tsis muaj phau ntawv cua sov lossis cov txheej txheem oxidation tshwj xeeb.

2. Hom Thickness ntawm Natural Oxide Txheej
Raws li cov ntaub ntawv pej xeem:
Tshaj tawm rau huab cua ntawm chav tsev kub: Qhov kawg thickness ntawm ntuj oxide txheej feem ntau ruaj khov ntawm1 ~ 2 nm(nanometers).
Freshly cleaved silicon nto (tsuas yog raug): hlob mus txog0.6-1 nmhauv ob peb teev.
Ntev - lub sij hawm raug (hli mus rau xyoo): qhov kawg thickness feem ntau tsis tshaj2-3 nm.
* Kev pom zoo kev lag luam:Nyob rau hauv ib txwm kub thiab siab atmospheric ib puag ncig, lub thickness ntawm ntuj oxide txheej ntawm silicon wafer feem ntau yog nyob rau hauv ntau ntawm 1 ~ 2 nm.**
3. Txoj cai loj hlob ntawm Natural Oxide Txheej
Kev loj hlob ntawm ntuj oxide txheej raws lilogarithmic txoj caies tsis yog linear kev loj hlob:
- Kev loj hlob sai hauv thawj theem: Thaum silicon wafer tsuas yog raug rau huab cua, oxide txheej loj hlob sai, thiab tuaj yeem ncav cuag ~ 1 nm hauv ob peb teev.
- Maj mam qeeb: Raws li lub thickness ntawm oxide txheej nce, oxygen yuav tsum tau diffuse los ntawm cov twb tsim oxide txheej kom ncav cuag lub silicon nto rau cov tshuaj tiv thaiv, yog li ntawd qhov kev loj hlob ntawm maj mam txo.
- Qhov kawg saturation: Thickness loj hlob maj mam nres, stabilizes ntawm 1 ~ 2 nm, thiab yuav tsis thicken infinitely.
- Kwv yees ntawm kev loj hlob kinetic formula: x ∝ ln(t + 1), qhov twg x yog oxide txheej thickness, t yog lub sij hawm raug.

4. Cov ntsiab lus tseem ceeb cuam tshuam rau lub thickness ntawm ntuj Oxide txheej
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Qhov xwm txheej |
Cov nyhuv ntawm Thickness |
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Kub |
Qhov siab dua qhov kub, qhov ceev ntawm cov tshuaj tiv thaiv oxidation, thiab qhov loj dua qhov kawg saturation thickness tiav. Nws yog kwv yees li 1 ~ 2 nm ntawm chav tsev kub, thiab cua sov yuav ua rau kom txoj kev loj hlob sai thiab nce qhov tuab. |
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Oxygen Concentration |
Qhov siab dua cov pa oxygen concentration hauv ib puag ncig, qhov loj dua qhov tuab ntawm cov txheej txheem oxide ntuj. Nws loj hlob sai dua thiab xaus kom tuab nyob rau hauv ib puag ncig oxygen ntshiab dua li hauv huab cua. |
|
Humidity/Moisture |
Cov dej noo ua kom oxidation, thiab cov txheej txheem oxide nyob rau hauv qhov siab -cov av noo yog me ntsis thicker dua nyob rau hauv ib puag ncig qhuav. |
|
Tiv tauj nrog kua |
Thaum silicon wafer soaked nyob rau hauv ib co kua (tshwj xeeb tshaj yog cov dej ntshiab), kev loj hlob ntawm ntuj oxide txheej yuav inhibited, thiab cov thickness yuav ua tau thinner dua nyob rau hauv huab cua. |
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Kev kho saum npoo |
Tom qab lub silicon wafer nto yog roughened, qhov tshwj xeeb deg cheeb tsam nce, thiab ib tug thicker natural oxide txheej yuav tsim. |
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Lub Sijhawm Cia |
Raws li lub sij hawm cia nce, lub thickness maj mam nce thiab nws thiaj li yuav saturated. |
5. Lub luag haujlwm ntawm Natural Oxide Layer hauv Semiconductor Processing
Lub luag haujlwm muaj txiaj ntsig:
- Passivate silicon nto: Repair dangling bonds on silicon surface, reduce surface state density, and improve the electrical performance of devices.
- Cov nyhuv tiv thaiv: Tiv thaiv silicon saum npoo kom tsis txhob muaj kab mob, thiab ua lub luag haujlwm tiv thaiv ib ntus ntawm cov txheej txheem ntub dej.
- Cov txheej txheem pabcuam: Ua raws li cov txheej txheem tsis nyob hauv qee cov txheej txheem ntxuav thiab photolithography.
Cov teeb meem yuav tsum nco ntsoov:
- Kev cuam tshuam rau ultra- cov txheej txheem sib tshuam: Nyob rau hauv cov txheej txheem tsim khoom siab heev, lub xub ntiag ntawm ntuj oxide txheej yuav hloov qhov sib txuas qhov tob, uas yuav tsum muaj kev tswj xyuas meej.
- Tiv tauj tiv thaiv nyhuv: Ua ntej hlau -silicon tiv tauj, cov txheej txheem oxide yuav tsum raug tshem tawm, txwv tsis pub qhov kev tiv thaiv yuav nce ntxiv.
- Thickness uniformity: Lub sijhawm khaws cia sib txawv thiab qhov chaw sib txawv yuav ua rau tsis sib xws ntawm cov txheej txheem oxide ntuj, cuam tshuam cov txheej txheem sib xws.
6. Cov ntsiab lus tseem ceeb hauv Kev Ua Lag Luam
- Tsuas yog polished silicon wafer: Tom qab polishing, nws yog tam sim ntawd raug rau huab cua, thiab lub ntuj oxide txheej hlob mus rau ~ 1 nm nyob rau hauv ob peb teev.
- Ntev - lub sij hawm cia: Sealed nitrogen ib puag ncig cia tuaj yeem cuam tshuam kev loj hlob ntawm ntuj oxide txheej thiab khaws cov tuab ntawm qis qis.
- Ua ntej-kev kho mob: Ua ntej cov txheej txheem tseem ceeb (xws li epitaxy, metallization), feem ntau yuav tsum tau tshem tawm cov txheej txheem oxide nrog diluted HF.
- Kev ntsuas thickness: Lub thickness ntawm ntuj oxide txheej feem ntau yog ntsuas los ntawm Ellipsometer lossis X-ray reflection (XRR).
Cov ntsiab lus
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Yam khoom |
Cov ntaub ntawv / Cov lus xaus |
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Tej thickness nyob rau hauv chav tsev kub cua |
1 ~ 2 nm |
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Txoj cai loj hlob |
Fast ua ntej, ces qeeb, thaum kawg saturated |
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Feem ntau cuam tshuam |
Kub> Oxygen concentration> Cia sijhawm |
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Kev lag luam tseem ceeb |
Nws muaj kev tiv thaiv passivation nyhuv, tab sis kuj yuav tsum tau muab tshem tawm hauv cov txheej txheem tseem ceeb |
Ntuj oxide txheej yog ib qho tshwm sim tsis tuaj yeem ntawm silicon wafer nto. Txawm hais tias nws cov thickness tsuas yog ob peb nanometers, nws tseem yuav tsum tau tswj nruj me ntsis thiab tswj hauv precision semiconductor manufacturing.

7. Ntuj Oxidation nyob rau hauv Original Hoobkas kaw ntim
Cov yam ntxwv oxidation hauv ntim ntim
Thaum silicon wafers tawm hauv lub Hoobkas, lawv feem ntau sivnitrogen ntim ntim(qee lub tuam txhab siv lub tshuab nqus tsev ntim lossis ntim cua qhuav). Thaum tsis qhib:
- Tsis tshua muaj oxygen concentration: High-purity nitrogen yog ntim rau hauv lub ntim, thiab cov pa oxygen feem ntau qis dua10 ppm(0.001%), uas yog deb tshaj 21% nyob rau hauv cov huab cua.
- Heev qeeb oxidation tus nqi: Vim muaj cov pa oxygen tsis txaus, cov tshuaj tiv thaiv oxidation ntuj yog inhibited heev, thiab kev loj hlob ntawm oxide txheej thickness qeeb heev.
- Tsis tshua muaj av noo: Lub Hoobkas ntim cov khoom qub feem ntau tso cov desiccant los tswj cov dej lwg hauv cov ntim hauv qab -40 degree, thiab cov ntsiab lus noo noo tsis tshua muaj qis, uas ua rau qeeb oxidation ntxiv.
Thickness hloov nyob rau hauv ntim ntim
- Thaum tawm hauv lub hoobkas: Tom qab cov silicon wafer polished thiab ntxuav, nws feem ntau yog luv luv rau huab cua rau kev soj ntsuam thiab ntim. Thaum lub sij hawm no, ib tug natural oxide txheej ntawm txog0.5 ~ 1 nmtau loj hlob.
- Khaws cia rau 1 xyoos: Hauv ntim ntim ntim ntim, oxide txheej tuab tsuas yog nce los ntawm0.1 ~ 0.3 nm, thiab tag nrho cov thickness feem ntau tsis tshaj 1.5 nm.
- Khaws rau 2 ~ 3 xyoos: Tag nrho cov thickness feem ntau tseem nyob hauv2nm ua.
- Txee lub neej: Lub txee lub neej ntawm cov khoom qub kaw silicon wafers ntawm chav tsev kub yog feem ntau6 ~ 12 lub hlis, thiab qee cov khoom siab -kawg yog cim li 3 ~ 6 lub hlis. Tom qab lub txee lub neej tas sij hawm, txawm hais tias lub ntuj oxide txheej tsis nce ntau, tej zaum yuav muaj teeb meem xws li qhov chaw paug thiab adsorbed impurities.
Cov lus pom zoo cia
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Kev cia khoom |
Pom zoo sijhawm cia siab tshaj plaws |
Kwv yees Oxide Txheej Kev Loj Hlob |
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Thawj ntim ntim ntim nitrogen, qhov kub thiab txias |
12 hli |
< 0.5 nm |
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Thawj ntim ntim nitrogen, tub yees (2 ~ 10 degree) |
18 ~ 24 lub hlis |
< 0.8 nm |
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Tsis siv tom qab tshem tawm, rov- kaw nrog nitrogen |
3 ~ 6 lub hlis |
0.3 ~ 0.5 nm |
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Tawm rau atmospheric ib puag ncig |
< 1 month |
Maj mam nce mus rau 1 ~ 2 nm |
Ntsiab lus xaus
Nyob rau hauv lub unopened kaw nitrogen ntim los ntawm lub Hoobkas thawj, ntuj oxidation yog zoo inhibited, thiab lub thickness loj hlob qeeb heev. Feem ntau, tag nrho cov tuab ntawm oxide txheej tseem nyob hauv 2 nm hauv lub txee lub neej, thiab yuav tsis muaj kev cuam tshuam loj rau kev siv.











